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2004-09-07 rev.2.1 page 1 spp15n60c3, spi15n60c3 SPA15N60C3 cool mos? power transistor v ds @ t j max 650 v r ds ( on ) 0.28 ? i d 15 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance ? p-to-220-3-31: fully isolated package (2500 vac; 1 minute) p-to220-3-31 p-to262-3-1 p-to220-3-1 p-to220-3-31 1 2 3 marking 15n60c3 15n60c3 15n60c3 type package ordering code spp15n60c3 p-to220-3-1 q67040-s4600 spi15n60c3 p-to262-3-1 q67040-s4601 SPA15N60C3 p-to220-3-31 q67040-s4603 maximum ratings parameter symbol value unit spa continuous drain current t c = 25 c t c = 100 c i d 15 9.4 15 1) 9.4 1) a pulsed drain current, t p limited by t j max i d p uls 45 45 a avalanche energy, single pulse i d =7.5a, v dd =50v e as 460 460 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =15a, v dd =50v e ar 0.8 0.8 avalanche current, repetitive t a r limited by t j max i a r 15 15 a gate source voltage static v gs 20 20 v gate source voltage ac (f >1hz) v gs 30 30 power dissipation, t c = 25c p tot 156 34 w spp_i operating and storage temperature t j , t st g -55...+150 c
2004-09-07 rev.2.1 page 2 spp15n60c3, spi15n60c3 SPA15N60C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 15 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.8 k/w thermal resistance, junction - case, fullpak r thjc _ fp - - 3.7 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja _ fp - - 80 soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =15a - 700 - gate threshold voltage v gs ( th ) i d =675 a, v gs =v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c t j =150c - - 0.1 - 1 100 a gate-source leakage current i gss v gs =30v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =9.4a t j =25c t j =150c - - 0.25 0.68 0.28 - gate input resistance r g f =1mhz, open drain - 1.23 -
2004-09-07 rev.2.1 page 3 spp15n60c3, spi15n60c3 SPA15N60C3 electrical characteristics parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =9.4a - 11.9 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1660 - pf output capacitance c oss - 540 - reverse transfer capacitance c rss - 40 - effective output capacitance, 4) energy related c o(er) v gs =0v, v ds =0v to 480v - 80 - effective output capacitance, 5) time related c o(tr) - 127 - turn-on delay time t d(on) v dd =480v, v gs =0/10v, i d =15a, r g =4.3 ? - 10 - ns rise time t r - 5 - turn-off delay time t d(off) - 50 80 fall time t f - 5 10 gate charge characteristics gate to source charge q gs v dd =480v, i d =15a - 7 - nc gate to drain charge q gd - 29 - gate charge total q g v dd =480v, i d =15a, v gs =0 to 10v - 63 - gate plateau voltage v ( plateau ) v dd =480v, i d =15a - 5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 soldering temperature for to-263: 220c, reflow 4 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 5 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2004-09-07 rev.2.1 page 4 spp15n60c3, spi15n60c3 SPA15N60C3 electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 15 a inverse diode direct current, pulsed i sm - - 45 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 460 - ns reverse recovery charge q rr - 27 - c peak reverse recovery current i rrm - 55 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 1300 - a/s typical transient thermal characteristics symbol value unit symbol value unit spa spa r th1 0.012 0.012 k/w c th1 0.0002495 0.0002495 ws/k r th2 0.023 0.023 c th2 0.0009406 0.0009406 r th3 0.043 0.043 c th3 0.001298 0.001298 r th4 0.156 0.176 c th4 0.00362 0.00362 r th5 0.178 0.371 c th5 0.009046 0.008025 r th6 0.072 2.522 c th6 0.412 0.412 spp_b spp_b external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2004-09-07 rev.2.1 page 5 spp15n60c3, spi15n60c3 SPA15N60C3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 w 170 spp15n60c3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t j 0 5 10 15 20 25 w 35 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
2004-09-07 rev.2.1 page 6 spp15n60c3, spi15n60c3 SPA15N60C3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 28 v ds 0 10 20 30 40 a 60 i d vgs = 20v vgs = 7v vgs = 6.5v vgs = 6v vgs = 5.5v vgs = 5v vgs = 4.5v vgs = 4v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 28 v ds 0 5 10 15 20 a 30 i d vgs = 20v vgs = 7v vgs = 6v vgs = 5.5v vgs = 5v vgs = 4.5v vgs = 4v
2004-09-07 rev.2.1 page 7 spp15n60c3, spi15n60c3 SPA15N60C3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 5 10 15 20 a 30 i d 0.4 0.6 0.8 1 1.2 1.4 ? 1.8 r ds(on) vgs = 4v vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 7v vgs = 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 9.4 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 ? 1.6 spp15n60c3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 v 10 v gs 0 10 20 30 40 a 60 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 15 a pulsed 0 10 20 30 40 50 60 70 80 nc 100 q gate 0 2 4 6 8 10 12 v 16 spp15n60c3 v gs 0,8 v ds max ds max v 0,2
2004-09-07 rev.2.1 page 8 spp15n60c3, spi15n60c3 SPA15N60C3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp15n60c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 3 6 9 a 15 i ar t j(start) =25c t j(start) =125c 15 avalanche energy e as = f ( t j ) par.: i d = 7.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 0.1 0.2 0.3 mj 0.5 e as 16 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spp15n60c3 v (br)dss
2004-09-07 rev.2.1 page 9 spp15n60c3, spi15n60c3 SPA15N60C3 17 avalanche power losses p ar = f ( f ) parameter: e ar =0.8mj 10 4 10 5 10 6 hz f 0 100 200 300 400 500 600 700 w 900 p ar 18 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 19 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 3 6 9 j 15 e oss
2004-09-07 rev.2.1 page 10 spp15n60c3, spi15n60c3 SPA15N60C3 definition of diodes switching characteristics
2004-09-07 rev.2.1 page 11 spp15n60c3, spi15n60c3 SPA15N60C3 p-to-220-3-1 a b a 0.25 m 2.8 15.38 0.6 2.54 0.75 0.1 0.13 1.27 4.44 b 9.98 0.48 0.05 all metal surfaces tin plated, except area of cut. c 0.2 10 0.4 3.7 c 0.5 0.1 0.9 5.23 13.5 0.5 3x metal surface min. x=7.25, y=12.3 2x 0.2 0.22 1.17 0.2 2.51
2004-09-07 rev.2.1 page 12 spp15n60c3, spi15n60c3 SPA15N60C3 p-to-262-3-1 (i 2 -pak) b a 0.25 m typical 2.54 3 x 0.75 0.1 1.05 1.27 b 9.25 0.2 0.05 1) metal surface min. x = 7.25, y = 6.9 c 11.6 0.3 10 0.2 c 2.4 0.5 0.1 0.2 4.55 13.5 0.5 all metal surfaces tin plated, except area of cut. 0.3 1 8.5 1) 2 x 4.4 7.55 1) 0...0.15 0...0.3 2.4 a p-to-220-3-31 (fullpak) p-to220-3-31 dimensions symbol [mm] [inch] min max min max a 10.37 10.63 0.4084 0.4184 b 15.86 16.12 0.6245 0.6345 c 0.65 0.78 0.0256 0.0306 d 2.95 typ. 0.1160 typ. e 3.15 3.25 0.124 0.128 f 6.05 6.56 0.2384 0.2584 g 13.47 13.73 0.5304 0.5404 h 3.18 3.43 0.125 0.135 k 0.45 0.63 0.0177 0.0247 l 1.23 1.36 0.0484 0.0534 m 2.54 typ. 0.100 typ. n 4.57 4.83 0.1800 0.1900 p 2.57 2.83 0.1013 0.1113 t 2.51 2.62 0.0990 0.1030
2004-09-07 rev.2.1 page 13 spp15n60c3, spi15n60c3 SPA15N60C3 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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